AFT09MS031GNR1

RF FETs, MOSFETs Overview

The AFT09MS031GNR1 is an N-channel enhancement-mode LDMOS transistor designed for mobile two-way radio applications operating between 764 MHz and 941 MHz. It delivers a P1dB output power of 31 W at 870 MHz with a drain efficiency of 71.0% under narrowband conditions (13.6 Vdc, IDQ = 500 mA). The device features high ruggedness, sustaining >65:1 VSWR without degradation at 17 Vdd. It utilizes a TO-270-2 plastic package capable of junction temperatures up to 225°C.

RF FETs, MOSFETs Feature Summary

• High ruggedness characterized by survival under extreme load mismatch (>65:1 VSWR) without device degradation.
• Integrated ESD protection meeting Human Body Model (2500 V), Machine Model (100 V), and Charge Device Model (1200 V) standards.
• Broadband performance capability delivering full power across the 764–870 MHz frequency range.
• High linearity suitable for complex modulation schemes including TETRA, SSB, and LTE.

RF FETs, MOSFETs Applications

• Output stage for 800 MHz trunking band mobile radio
• Output stage for 900 MHz trunking band mobile radio
• Large-signal common source amplifier applications in mobile radio equipment

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to obsolescence notices. Confirm that the GNR1 suffix corresponds to the specific tape and reel packaging requirements (500 units, 24 mm tape width, 13-inch reel). Ensure handling procedures account for moisture sensitivity level 3 and appropriate reflow soldering methods for over-molded plastic packages.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring wideband operation within the 764–941 MHz spectrum. The device is optimized for 13.6 Vdc supply voltages. Designers must implement matching networks based on the provided series equivalent source and load impedances for either narrowband (870 MHz) or broadband (760–870 MHz) configurations to achieve optimal gain and efficiency.

RF FETs, MOSFETs Part Context

This device belongs to the Airfast Wideband RF Power LDMOS Transistor family from NXP Semiconductors (formerly Freescale). It is functionally paired with the AFT09MS031NR1 variant, which differs primarily in lead configuration; the GNR1 suffix indicates gull-wing leads for surface mount installation in a TO-270-2 package.

RF FETs, MOSFETs Replacement Considerations

AFT09MS031NR1

RF FETs, MOSFETs FAQ

What is the maximum junction temperature rating?

The operating junction temperature range extends up to +225°C.

How does the device perform under severe load mismatch?

At 870 MHz with 1.2 W input power (3 dB overdrive) and 17 Vdd test voltage, the device shows no degradation even when subjected to >65:1 VSWR at all phase angles.

What are the typical capacitance values at 13.6 Vdc?

At 13.6 Vdc and 1 MHz, the reverse transfer capacitance (Crss) is typically 2.1 pF, output capacitance (Coss) is 63 pF, and input capacitance (Ciss) is 140 pF.