AFT18HW355SR6

RF FETs, MOSFETs Overview

The AFT18HW355SR6 is an N-Channel enhancement-mode lateral MOSFET RF power LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. Operating within the 1805 to 1880 MHz frequency range, it delivers 63 Watts average output power at a 28 Vdc supply. The device features an asymmetrical Doherty configuration with integrated input and output matching. It supports single-carrier W-CDMA performance with typical drain efficiency of 48.3% and power gain of 15.2 dB.

RF FETs, MOSFETs Feature Summary

• Advanced high-performance in-package Doherty architecture
• Designed for wide instantaneous bandwidth applications
• Greater negative gate-source voltage range for improved Class C operation
• Optimized for digital predistortion error correction systems

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Wideband RF power amplification
• Digital predistortion linearization circuits

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches design requirements. Ensure thermal management solutions align with junction-to-case resistance specifications. Validate package compatibility with mounting hardware prior to integration.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring high linearity and efficiency in the 1805-1880 MHz band. Consider the specific biasing requirements for the carrier and peaking sides. Evaluate thermal dissipation capabilities against system constraints. Verify load mismatch tolerance meets application reliability standards.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS transistor series by Freescale Semiconductor (now NXP). It utilizes advanced silicon technology optimized for infrastructure applications. The device represents a solution for modern cellular networks demanding high spectral efficiency and robust performance under varying load conditions.

RF FETs, MOSFETs Replacement Considerations

Check for updated revisions or successor parts from NXP Semiconductors. Verify pinout and electrical parameter compatibility before substitution. Consult official documentation for any functional differences between legacy and current production runs.