AFT21S140W02SR3

RF FETs, MOSFETs Overview

The AFT21S140W02SR3 is a 32 W average power RF LDMOS transistor designed for cellular base station applications requiring wide instantaneous bandwidth. It operates within the 2110 to 2170 MHz frequency range at a 28 Vdc drain voltage. The device features internal input and output matching, optimized for Doherty amplifier configurations. It includes integrated ESD protection and can withstand high output VSWR conditions.

RF FETs, MOSFETs Feature Summary

• Optimized for Doherty amplifier applications
• Internal input and output matching
• Capable of withstanding extremely high output VSWR
• Greater negative gate-source voltage range

RF FETs, MOSFETs Applications

• Cellular base station applications
• Wide instantaneous bandwidth systems
• Doherty amplifier designs

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized NXP channels or certified distributors. Confirm RoHS compliance status and check for moisture sensitivity handling requirements during storage and assembly. Ensure ordering suffixes match specific packaging needs as defined in official documentation.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring broad bandwidth coverage between 2110 and 2170 MHz. Evaluate thermal management capabilities given the junction-to-case resistance specifications. Consider the internal matching simplifies impedance network design compared to unmatched alternatives.

RF FETs, MOSFETs Part Context

This part belongs to the Airfast RF Power LDMOS Transistor family from NXP Semiconductors. These transistors are engineered for robust performance in demanding wireless infrastructure environments. The series provides reliable solutions for modern communication standards requiring high linearity and efficiency.

RF FETs, MOSFETs Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters and package dimensions to ensure functional compatibility without redesigning the host circuit board.

RF FETs, MOSFETs FAQ

What is the maximum operating voltage?

The maximum drain-source voltage rating is +65 Vdc.

Is the device internally matched?

Yes, the AFT21S140W02SR3 features internal matching on both the input and output ports.

What is the typical gain at 2140 MHz?

The typical power gain (Gps) at 2140 MHz is 19.3 dB under standard test conditions.