AFV141KHSR5

RF FETs, MOSFETs Overview

The AFV141KHSR5 is an RF LDMOS power transistor manufactured by NXP USA Inc., designed for high-frequency applications. It operates at a frequency of 1.4 GHz with a test voltage of 50 V. The device provides a gain of 17.7 dB and supports a maximum current of 100 mA. Packaged in the NI-1230-4S format, this component is classified as an RF MOSFET suitable for broadband radio communications.

RF FETs, MOSFETs Feature Summary

• Utilizes LDMOS technology for robust performance in RF environments
• Optimized for operation at 1.4 GHz frequencies
• Provides stable amplification characteristics with defined gain metrics

RF FETs, MOSFETs Applications

• Broadband radio communications systems
• RF power amplifier stages
• Avionics signal processing

RF FETs, MOSFETs Procurement Notes

Verify the specific package designation NI-1230-4S matches your PCB footprint requirements before ordering. Confirm that the 50 V test voltage rating aligns with your circuit's power supply constraints. Ensure compatibility with 1.4 GHz operational frequencies for your intended application design.

RF FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring LDMOS technology at 1.4 GHz. Consider the 17.7 dB gain specification for signal amplification needs. Evaluate the 50 V operating voltage against system power limits. The NI-1230-4S package must fit the available board space.

RF FETs, MOSFETs Part Context

This part belongs to NXP's portfolio of RF transistors, specifically targeting broadband communication infrastructure. It complements other LDMOS devices like the MMRF2010N series, offering solutions for avionics and radio frequency power amplification within the broader EdgeVerse platform ecosystem.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult official NXP channels for direct replacements or pin-compatible alternatives.