AIGB40N65F5ATMA1

Single IGBTs Overview

The AIGB40N65F5ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the Trenchstop 5 F5 series. It utilizes silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 74 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 250 W. It operates within a temperature range of -40°C to +175°C.

Single IGBTs Feature Summary

• Incorporates Trenchstop 5 technology for optimized switching performance and low conduction losses.
• Designed for surface-mount assembly using the compact D2PAK-3 package.
• Features robust thermal characteristics suitable for high-power density applications.

Single IGBTs Applications

• High-frequency power supplies
• Motor control systems
• Uninterruptible power supplies

Single IGBTs Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific part number matches the required Trenchstop 5 F5 variant. Check for moisture sensitivity handling requirements due to the SMD packaging type. Ensure compliance with relevant environmental directives such as RoHS standards before integration into final assemblies.

Single IGBTs Selection Notes

Select this component when a surface-mount IGBT with 650 V blocking capability and 74 A continuous current rating is required. The D2PAK-3 package offers a balance between thermal performance and board space efficiency compared to through-hole alternatives. Consider the 1.6 V saturation voltage for conduction loss calculations in medium-frequency switching applications.

Single IGBTs Part Context

This discrete IGBT belongs to Infineon's Trenchstop 5 family, which represents an evolution in silicon switch technology. The 'F5' suffix denotes specific internal cell architecture optimizations for balancing switching speed and forward voltage drop. It serves as a standalone switching element distinct from integrated modules or hybrid SiC devices.

Single IGBTs Replacement Considerations

The AIGB40N65H5ATMA1 is a documented alternative within the same series, differing primarily in saturation voltage specifications. Verify pinout compatibility and thermal resistance values when substituting. No other official cross-references are publicly confirmed for this exact part number.