AIGB50N65F5ATMA1

$5.07

Description：IGBT NPT 650V 50A TO263-3-2
Series：-

SKU:2eca3a15bd22 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

AIGB50N65F5ATMA1 is listed in the Single IGBTs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IGBT NPT 650V 50A TO263-3-2. Review the specifications below when checking this part for your BOM.

Single IGBTs specifications for AIGB50N65F5ATMA1

Description：IGBT NPT 650V 50A TO263-3-2
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3-2
Grade：-
Qualification：-

Single IGBTs datasheet and documents for AIGB50N65F5ATMA1

AIGB50N65F5ATMA1

Single IGBTs Overview

The AIGB50N65F5ATMA1 is a single N-channel IGBT from Infineon Technologies, utilizing TRENCHSTOP™ 5 technology in a D2PAK-3 (TO-263-3) surface-mount package. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.65 V and supports a power dissipation of 270 W. Operating within a temperature range of -40°C to +175°C, it integrates an anti-parallel diode with a forward voltage of 1.35 V.

Single IGBTs Feature Summary

TRENCHSTOP™ 5 technology for optimized switching performance
Integrated fast recovery anti-parallel diode
Surface-mount D2PAK-3 packaging for automated assembly

Single IGBTs Applications

High-frequency motor drives
Switched-mode power supplies
Induction heating systems

Single IGBTs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging and tape specifications. Confirm RoHS compliance status through the manufacturer's material content data sheet prior to integration into regulated assemblies.

Single IGBTs Selection Notes

Select this component when a 650 V rating and 80 A continuous current capability are required in a compact SMD form factor. Ensure thermal management design accommodates the 270 W power dissipation limit and that gate drive voltages remain within the specified ±20 V range.

Single IGBTs Part Context

This part belongs to the TRENCHSTOP™ 5 family, designed for high-efficiency power switching applications. It serves as a discrete alternative to modules in medium-power converters, offering improved switching characteristics compared to previous generations while maintaining robust avalanche capabilities.

Single IGBTs Replacement Considerations

Direct pin-compatible replacements include the IKW50N65EH5 and AIKB50N65DF5ATMA1. Verify saturation voltage and switching energy parameters, as these differ between packages and internal die configurations.

Explore related parts through IGBTs, Transistors, Discrete Semiconductor Products, all product categories.

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