AIMBG75R016M1HXTMA1

Single IGBTs Overview

The AIMBG75R016M1HXTMA1 is a CoolSiC Automotive Power Device featuring a 750 V drain-source voltage and an N-channel enhancement mode configuration. It utilizes PG-TO263-7 packaging with a dedicated driver source pin. Key electrical parameters include a typical on-state resistance of 16 mΩ (max 22 mΩ) at VGS=18V, a continuous DC drain current of 98 A at 25°C case temperature, and a peak pulse current of 332 A. The device exhibits a total gate charge of 81 nC and supports junction temperatures up to 175°C. It is qualified according to AEC Q101 standards for automotive reliability.

Single IGBTs Feature Summary

• Highly robust 750 V technology with 100% avalanche testing
• Best-in-class RDS(on) x Qfr product combination
• Excellent RDS(on) x Qoss and RDS(on) x QG efficiency metrics
• Unique combination of low Crss/Ciss capacitance and high VGS(th)
• Infineon proprietary die attach technology for thermal performance

Single IGBTs Applications

• Uni- and bidirectional On Board Chargers
• HV-LV DCDC converters
• Hard switching half bridges
• Soft switching topologies

Single IGBTs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and tape/reel specifications. Confirm that the component meets the required AEC Q101 qualification level for your target application. Check for any recent revision history updates in the datasheet that may affect parameter tolerances or recommended operating conditions before finalizing procurement orders.

Single IGBTs Selection Notes

Select this component for applications requiring high efficiency in hard switching environments and superior thermal dissipation capabilities. Ensure the gate drive circuitry accommodates the specified VGS operating range and plateau characteristics. Consider the internal body diode forward recovery characteristics when designing circuits involving reverse conduction or freewheeling paths to optimize system performance.

Single IGBTs Part Context

This part belongs to the Infineon CoolSiC 750 V G1 family of silicon carbide MOSFETs designed specifically for automotive power electronics. It represents a generation of devices leveraging wide bandgap SiC material characteristics to achieve higher system efficiency and reliability compared to traditional silicon counterparts in high-voltage bus applications.

Single IGBTs Replacement Considerations

Direct replacements within the same package and electrical class include AIMBG75R020M1HXTMA1 and AIMBG75R027M1HXTMA1. Verify pinout compatibility, particularly regarding the non-interchangeable source and driver source pins, when substituting with other TO-263-7 variants from the same product line.