APT1201R4BLLG

$11.27

Description：MOSFET N-CH 1200V 9A TO247
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube

SKU:54362b62bcfd Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT1201R4BLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 9A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1201R4BLLG

Description：MOSFET N-CH 1200V 9A TO247
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.4Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT1201R4BLLG

APT1201R4BLLG

Single FETs, MOSFETs Overview

APT1201R4BLLG is a single N-channel power MOSFET from Microchip Technology, packaged in TO-247AD. It features a 1200 V drain-source breakdown voltage and a maximum continuous drain current of 9 A at case temperature. The device has a maximum on-resistance of 1.4 Ω and an avalanche energy rating of 1210 mJ. It is RoHS compliant and lead-free.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 1200 V breakdown
Integrated body diode for single-switch applications
Robust avalanche energy handling

Single FETs, MOSFETs Applications

High-voltage switching circuits
Inductive load control
Power conversion topologies requiring high blocking voltage

Single FETs, MOSFETs Procurement Notes

Verify the exact part number suffix against official Microchip documentation to confirm package type and electrical specifications. Ensure compatibility with thermal management requirements for the TO-247AD package. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling. Consider the 1.4 Ω on-resistance for conduction loss calculations. Evaluate the 1210 mJ avalanche energy rating for inductive switching scenarios. Ensure the TO-247AD flange mount package fits the mechanical design constraints.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's discrete power semiconductor portfolio, specifically within the MOSFET category. It is designed for general-purpose high-voltage switching applications. The TO-247AD package provides robust thermal performance and mechanical stability for industrial and commercial power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Cross-reference key parameters such as voltage rating, current capacity, and package dimensions when evaluating potential replacements.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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