APT34M60S/TR

$12.51

Description：MOSFET N-CH 600V 36A D3PAK
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:76c458cbda21 Category: Single FETs, MOSFETs Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APT34M60S/TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 36A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT34M60S/TR

Description：MOSFET N-CH 600V 36A D3PAK
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：165 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：6640 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：624W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D3PAK
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT34M60S/TR

APT34M60S/TR

Single FETs, MOSFETs Overview

The APT34M60S/TR is a single N-channel enhancement mode MOSFET from Microchip Technology, utilizing Silicon technology. It features a D3PAK-3 (TO-268) surface-mount package with tape and reel packaging. Key electrical parameters include a drain-source breakdown voltage of 600 V and a continuous drain current of 36 A. The device exhibits a maximum on-resistance of 190 mOhms at specified conditions. Gate-source voltage limits are defined between -30 V and +30 V, with a threshold voltage of 3 V. Total gate charge is 165 nC. Thermal performance includes a power dissipation rating of 624 W, operating within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Single N-channel enhancement mode configuration for discrete switching applications
High thermal stability supporting operation up to +150°C junction temperature
Surface-mount D3PAK-3 package design optimized for automated assembly

Single FETs, MOSFETs Applications

General purpose power switching circuits
DC-DC converter topologies
Motor control drive stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TR indicates tape and reel packaging distinct from tube variants. Confirm RoHS compliance status through official documentation prior to integration. Ensure the ordering part number matches the required package style and quantity format for manufacturing lines. Cross-reference datasheet revisions to validate parameter consistency against current production batches.

Single FETs, MOSFETs Selection Notes

Select this component where a 600 V rating and 36 A continuous current capability align with circuit requirements. Evaluate the 190 mOhm on-resistance for conduction loss calculations in the target application. Consider the D3PAK-3 footprint compatibility with existing PCB layouts. Assess thermal management needs given the 624 W dissipation rating under appropriate heatsinking conditions.

Single FETs, MOSFETs Part Context

This part belongs to the POWER MOS 8 family of silicon N-channel MOSFETs manufactured by Microchip Technology. The series is characterized by advanced cell architecture designed for high efficiency and robust performance in power electronics. The APT34M60S variant specifically targets medium-power applications requiring reliable switching characteristics.