APT34M60S

Single FETs, MOSFETs Overview

The APT34M60S is a single N-channel enhancement mode silicon MOSFET manufactured by Microchip Technology. It utilizes D3PAK-3 surface-mount packaging and operates with a drain-source breakdown voltage of 600 V and a continuous drain current of 36 A. The device features a maximum on-resistance of 190 mOhms at a gate-source voltage of 10 V, with a threshold voltage typically around 5 V. It supports a gate drive range of -30 V to +30 V and dissipates up to 624 W of power. Operating temperatures span from -55 °C to +150 °C, with switching characteristics including a typical turn-on delay of 37 ns and fall time of 34 ns.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 600 V drain-source breakdown for robust power switching applications
• Low on-state resistance to minimize conduction losses in high-current circuits
• Enhanced thermal performance supporting operation up to 150 °C junction temperature
• Surface-mount D3PAK-3 package design for efficient PCB integration

Single FETs, MOSFETs Applications

• Industrial motor drives and control systems
• High-frequency power supply topologies
• DC-DC converter stages requiring low loss
• Inverter circuits for renewable energy systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturing date code upon procurement. Confirm RoHS compliance status through official documentation as requirements may vary by region. Ensure the supplier provides valid traceability records matching the Microchip Technology part number. Cross-reference datasheet revisions to confirm pinout and electrical parameters remain consistent with your design specifications before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 600 V rating with moderate current handling capabilities. The D3PAK-3 package suits applications needing efficient thermal dissipation without through-hole mounting constraints. Evaluate the 190 mOhm on-resistance against your efficiency targets and heat sink requirements. Consider the 36 A continuous current limit relative to peak load demands and derating factors at elevated ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to Microchip Technology's discrete MOSFET portfolio, specifically designed for general-purpose power switching. It complements other devices in the APT series, offering a balance between voltage rating and conduction efficiency. The D3PAK-3 form factor aligns with industry-standard footprints for medium-power surface-mount applications.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Direct replacements must match the 600 V rating, N-channel configuration, and D3PAK-3 footprint. Verify that any substitute maintains compatible gate charge and threshold voltage levels to ensure proper driver interface compatibility.