Single FETs, MOSFETs APT4012BVRG product image

APT4012BVRG

  • Description:MOSFET N-CH 400V 37A TO247AD
  • Series:POWER MOS V®
  • Mfr:Microsemi Corporation
  • Package:Bulk

SKU:96e725e63d68 Category: Brand:

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APT4012BVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 400V 37A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT4012BVRG

  • Description:MOSFET N-CH 400V 37A TO247AD
  • Series:POWER MOS V®
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):400 V
  • Current - Continuous Drain (Id) @ 25°C:37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:120mOhm @ 18.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:290 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:5400 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):370W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AD
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT4012BVRG

APT4012BVRG

Single FETs, MOSFETs Overview

The APT4012BVRG is a high-voltage N-Channel enhancement mode power MOSFET from the Power MOS V® series, manufactured by Microsemi. It features a 400V drain-source breakdown voltage and a continuous drain current of 37A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.12Ω at VGS=10V. Packaged in a TO-247 housing, it supports a total power dissipation of 370W at 25°C. The component includes an integrated body diode with a reverse recovery time of 450ns.

Single FETs, MOSFETs Feature Summary

  • Power MOS V® technology minimizes JFET effect to reduce on-resistance
  • Optimized gate layout enables faster switching speeds
  • 100% avalanche tested for enhanced ruggedness
  • Lower leakage current characteristics

Single FETs, MOSFETs Applications

  • High voltage DC-DC converters
  • Motor control applications
  • Switching power supplies
  • Induction heating systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'VRG' against official Microsemi documentation to confirm package type and tape-and-reel specifications. Ensure the manufacturer designation aligns with current Microchip or Microsemi branding structures. Confirm RoHS compliance status through the latest datasheet revision before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 400V blocking capability with moderate current handling up to 37A. Evaluate thermal management requirements based on the 0.34°C/W junction-to-case resistance. Consider the 450ns reverse recovery time when designing circuits involving synchronous rectification or inductive load switching.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS V® family, representing a generation of high-voltage N-Channel enhancement mode devices. The series focuses on reducing on-resistance through minimized JFET effects and optimized packing density. The TO-247 package provides a standard mounting interface for industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for equivalent 400V, 37A TO-247 MOSFETs. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers.

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