APT40M70JVR

Single FETs, MOSFETs Overview

The APT40M70JVR is a Power MOS V® N-Channel enhancement mode power MOSFET manufactured by Microchip Technology. It features a Drain-Source Breakdown Voltage (BVDSS) of 400V and a Continuous Drain Current (ID) of 53A at TC = 25°C. The device has a maximum On-State Drain Current (ID(on)) of 212A and a typical Drain-Source On-State Resistance (RDS(on)) of 0.070 Ohms at VGS = 10V. Total Power Dissipation (PD) is rated at 450W at TC = 25°C with a linear derating factor of 3 W/°C. The operating and storage junction temperature range spans from -55°C to +150°C. The component utilizes an ISOTOP® SOT-227 package.

Single FETs, MOSFETs Feature Summary

• Power MOS V® technology minimizes the JFET effect, increases packing density, and reduces on-resistance.
• Optimized gate layout achieves faster switching speeds compared to previous generations.
• 100% avalanche tested for enhanced reliability under transient conditions.
• Lower leakage current characteristics contribute to improved efficiency.

Single FETs, MOSFETs Applications

• High voltage power switching applications
• Industrial motor control systems
• Power supply designs requiring high breakdown voltage

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (e.g., Rev C) matches your design requirements. Confirm that thermal management solutions align with the specified junction-to-case thermal impedance and power dissipation ratings. Ensure handling procedures account for electrostatic discharge sensitivity as indicated in the documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a 400V N-Channel MOSFET with low on-resistance is required. Consider the 53A continuous current rating and 450W power dissipation capability at 25°C case temperature. Evaluate the SOT-227 package dimensions for mechanical fit and verify gate charge parameters against driver capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the Advanced Power Technology (APT) Power MOS V® series, now produced by Microchip Technology. It is designed as a high-voltage, high-current solution utilizing advanced silicon processes to optimize performance metrics like on-resistance and switching speed within a robust screw-mount package.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Verify compatibility based on matching BVDSS, ID, RDS(on), and package type (SOT-227/ISOTOP®). Consult manufacturer cross-reference guides for equivalent parts with similar electrical and thermal specifications.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The single pulse avalanche energy (EAS) rating is 50 mJ, starting at Tj = +25°C with L = 1.78mH and RG = 25Ω.

How does the on-resistance vary with temperature?

The on-resistance increases with junction temperature. Figure 8 in the datasheet shows the normalized on-resistance versus junction temperature, indicating higher resistance at elevated temperatures up to 150°C.

What is the isolation voltage rating?

The RMS isolation voltage from terminals to mounting base is 2500 Volts for a 50-60 Hz sinusoidal waveform applied for 1 minute.