APT40SM120S

Single FETs, MOSFETs Overview

The APT40SM120S is a Silicon Carbide (SiC) N-Channel MOSFET manufactured by Microsemi Corporation. It features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous Drain Current (Id) of 41 A at case temperature. The device utilizes the D3PAK surface-mount package. Key electrical characteristics include a Gate Charge (Qg) maximum of 300 nC at 10 V, an Input Capacitance (Ciss) maximum of 7736 pF at 25 V, and a Gate-to-Source Voltage (Vgs) rating of ±30 V. The component supports a junction temperature range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Silicon Carbide (SiC) technology for high-power density performance
• Designed for efficient switching in high-voltage applications
• Surface-mount D3PAK package facilitates automated assembly

Single FETs, MOSFETs Applications

• Motor control systems
• High-frequency power conversion
• Industrial inverters

Single FETs, MOSFETs Procurement Notes

This component is officially classified as obsolete or no longer manufactured by Microsemi Corporation. Verification of current availability requires checking authorized distributors for remaining stock or end-of-life status. Sourcing should prioritize verified suppliers to ensure authenticity, as lifecycle status impacts long-term supply chain stability and replacement planning.

Single FETs, MOSFETs Selection Notes

Engineers selecting this part must account for its obsolete status when designing new products. The 1200 V rating and SiC technology make it suitable for high-efficiency applications requiring low switching losses. Designers should evaluate thermal management requirements given the 273 W power dissipation capability and verify that the D3PAK footprint matches the target PCB layout constraints.

Single FETs, MOSFETs Part Context

The APT40SM120S belongs to Microsemi's portfolio of high-voltage discrete semiconductors. As a Silicon Carbide FET, it represents the company's focus on wide-bandgap materials for superior performance compared to traditional silicon devices. This specific model targets industrial and automotive sectors demanding robust power handling in compact packages.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, engineers should consult Microchip Technology's official cross-reference tools or datasheets for recommended modern replacements with compatible voltage, current, and package specifications.