Single FETs, MOSFETs APT44F80B2 product image

APT44F80B2

$17.48
  • Description:MOSFET N-CH 800V 47A T-MAX
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube

SKU:60181f6ef073 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

APT44F80B2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 47A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT44F80B2

  • Description:MOSFET N-CH 800V 47A T-MAX
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:210mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:305 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:9330 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1135W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:T-MAX™ [B2]
  • Package / Case:TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT44F80B2

APT44F80B2

Single FETs, MOSFETs Overview

The APT44F80B2 is a through-hole N-channel power MOSFET from Microchip Technology's POWER MOS 8 series. It features an 800V drain-source voltage rating and a continuous drain current of 44A at case temperature. The device is housed in a T-MAX B2 package, equivalent to TO-247-3, with a maximum power dissipation of 1120W at case temperature. Key electrical characteristics include a maximum on-resistance of 220 milliohms at 10V gate drive and 22A drain current, a gate charge of 265nC at 10V, and an input capacitance of 8290pF at 25V. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 800V breakdown for robust switching applications
  • Low on-resistance design optimized for conduction loss reduction
  • T-MAX B2 package providing high thermal performance and mechanical stability

Single FETs, MOSFETs Applications

  • Industrial motor drives
  • Power supply inverters
  • High-frequency switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes to ensure compatibility with your design requirements. Confirm that the manufacturer documentation aligns with the required thermal and electrical specifications before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component based on its 800V rating and 44A current capacity for high-power switching needs. Consider the T-MAX B2 package for superior heat dissipation compared to standard TO-247 packages. Ensure the gate drive voltage supports the specified Rds(on) performance metrics.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's POWER MOS 8 family, which utilizes advanced cell technology to achieve low on-resistance and fast switching speeds. The APT44F80B2 is designed for high-efficiency power conversion systems requiring reliable performance under high thermal stress conditions.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify thermal resistance values and package dimensions to ensure physical interchangeability without modifying the PCB layout.

APT44F80B2APT44F80B2
$17.48
Buy Now

Recent News