Single FETs, MOSFETs APT4M120K product image

APT4M120K

  • Description:MOSFET N-CH 1200V 5A TO220
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube

SKU:967bf7007721 Category: Brand:

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APT4M120K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 5A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT4M120K

  • Description:MOSFET N-CH 1200V 5A TO220
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:4Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1385 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):225W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220 [K]
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for APT4M120K

APT4M120K

Single FETs, MOSFETs Overview

The APT4M120K is a single N-channel MOSFET manufactured by Microchip Technology. It features a drain-source breakdown voltage of 1200 V and a continuous drain current rating of 5 A. The device exhibits a maximum on-state resistance of 3800 milliohms at room temperature. It is housed in a TO-220 package with three leads. Key switching parameters include a fall time of 6.9 ns and a forward transconductance minimum of 4.5 S. The component is designed for high-voltage power switching applications.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 1200 V drain-source breakdown
  • Single N-channel configuration for discrete switching
  • Robust thermal performance in TO-220 packaging

Single FETs, MOSFETs Applications

  • High-voltage DC-DC converters
  • Inductive load switching circuits
  • Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and revision level against the official Microchip datasheet to ensure compatibility with your design requirements. Confirm that the component status aligns with your production timeline, as availability may vary. Cross-reference pinouts and mechanical dimensions with the latest ECAD models before finalizing PCB layouts.

Single FETs, MOSFETs Selection Notes

Select this component when a 1200 V rating is required for high-side or low-side switching. Evaluate the 3800 milliohm Rds(on) against thermal management constraints for the expected load current. Ensure the TO-220 footprint matches the available board space and heatsinking infrastructure.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip (formerly Microsemi) APT series of discrete power MOSFETs. These devices are engineered for general-purpose high-voltage applications requiring reliable switching performance. The series typically offers a balance of voltage handling and current capacity suitable for industrial and consumer power electronics.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as the IRF610LPBF from Vishay Siliconix if the original part is obsolete. Verify that any replacement maintains the 1200 V rating and compatible TO-220 package dimensions.

APT4M120KAPT4M120K

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