APT5010LFLLG

$14.78

Description：MOSFET N-CH 500V 46A TO264
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube

SKU:3580acf3496c Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT5010LFLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 46A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5010LFLLG

Description：MOSFET N-CH 500V 46A TO264
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：100mOhm @ 23A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：520W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-264 [L]
Package / Case：TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for APT5010LFLLG

APT5010LFLLG

Single FETs, MOSFETs Overview

The APT5010LFLLG is a Power MOS 7 N-Channel enhancement mode power MOSFET in the T-MAX LFLL package. It features a Drain-Source Breakdown Voltage (BVDSS) of 500V and a Continuous Drain Current (ID) of 46A at TC = 25°C. The Drain-Source On-State Resistance (RDS(on)) is 0.100 Ohms at VGS = 10V and ID = 23A. Total Power Dissipation (PD) is 520W at TC = 25°C, with an operating junction temperature range from -55°C to +150°C. Key dynamic characteristics include a Total Gate Charge (Qg) of 95nC at VGS = 10V and VDD = 250V, and a Reverse Recovery Time (trr) of 280ns at TJ = 25°C.

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology significantly lowers RDS(ON) and gate charge for reduced conduction and switching losses.
Patented metal gate structure enables exceptionally fast switching speeds.
Features a fast recovery body diode suitable for high-frequency applications.
T-MAX LFLL package provides increased power dissipation and easier driving compared to standard packages.

Single FETs, MOSFETs Applications

High-efficiency DC-DC converters
Motor control systems
Uninterruptible power supplies (UPS)
Inductive load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'LFLL' against the manufacturer's current datasheet to confirm the exact package variant and lead-free status. Ensure thermal management designs account for the specified linear derating factor and maximum junction temperature limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V rating and low on-resistance are required for efficient power conversion. Consider the total gate charge and Miller capacitance values for driver selection to optimize switching performance. Evaluate the thermal impedance curves to determine appropriate heatsinking for the intended duty cycle and ambient temperature.

Single FETs, MOSFETs Part Context

This device belongs to the Microchip Technology Power MOS 7 family, designed for high-voltage, low-loss applications. The LFLL designation indicates a specific leaded package configuration within the T-MAX series, offering improved thermal performance over standard TO-247 variants while maintaining robust electrical characteristics.