APT5017BVRG

Single FETs, MOSFETs Overview

The APT5017BVRG is an N-channel power MOSFET manufactured by Microchip Technology, housed in a TO-247-3 package. It features a drain-source breakdown voltage (Vds) of 500 V and a continuous drain current (Id) of 30 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 170 mΩ. Gate specifications include a threshold voltage (Vgs(th)) of 4 V and a total gate charge (Qg) of 200 nC. It supports a maximum gate-source voltage (Vgs) of ±30 V and operates within a junction temperature range of -55 °C to +150 °C, with a power dissipation rating of 370 W.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon technology for robust high-power switching applications
• Designed as a single enhancement-mode N-channel transistor
• Constructed in a through-hole TO-247-3 package for thermal management

Single FETs, MOSFETs Applications

• Industrial automation systems
• Process automation control units
• High-power module implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'VRG' against the manufacturer's official datasheet to confirm RoHS compliance status and exact pinout configuration. Ensure the procurement documentation explicitly references the Microchip Technology part number APT5017BVRG to distinguish it from legacy Advanced Power Technology markings or alternative packaging variants. Cross-reference the datasheet revision date during acquisition to guarantee alignment with current electrical specifications and reliability standards.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V blocking capability and 30 A continuous current handling are required in a through-hole format. The 170 mΩ on-resistance offers a balance between conduction losses and cost for medium-power switching duties. Consider the 370 W power dissipation limit and the necessity of adequate heatsinking to maintain junction temperatures within the specified operational range under load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the MOS5 series of power MOSFETs from Microchip Technology. It represents a transition from the original Advanced Power Technology product line, maintaining similar electrical characteristics while adhering to current manufacturing standards. The TO-247 package is standard for high-current discrete power transistors requiring reliable solder joint integrity and efficient heat transfer to external cooling structures.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 500 V rating, 30 A current capacity, and TO-247-3 package. Verify that any replacement maintains comparable Rds(on) and gate charge values to ensure circuit compatibility without redesigning the drive logic or thermal management system.