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APT56M50B2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 56A T-MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT56M50B2
- Description：MOSFET N-CH 500V 56A T-MAX
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：220 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：780W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for APT56M50B2
Single FETs, MOSFETs Overview
The APT56M50B2 is a single N-channel Power MOSFET manufactured by Microchip Technology, utilizing Silicon technology and the Power MOS 8 architecture. It features a TO-247 MAX (T-MAX-3) through-hole package with a drain-source voltage rating of 500 V and a continuous drain current of 56 A at case temperature. The maximum on-resistance is 85 mOhms at 10 V gate drive, with a typical gate charge of 220 nC. The device supports a junction temperature range from -55°C to +150°C and offers a power dissipation capacity of 780 W.
Single FETs, MOSFETs Feature Summary
- Power MOS 8 technology for optimized switching performance
- Through-hole mounting in a robust TO-247 MAX package
- High thermal stability with a 150°C maximum junction temperature
Single FETs, MOSFETs Applications
- Industrial motor drives
- Switch-mode power supplies
- Inverter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix B2 against official Microchip documentation to confirm pinout and electrical characteristics match the intended design requirements. Ensure the procurement channel provides valid traceability and authenticity guarantees for discrete semiconductor components.
Single FETs, MOSFETs Selection Notes
Select this component when a 500 V rated N-channel MOSFET with 56 A continuous current capability is required. The 85 mOhm on-resistance and 220 nC gate charge define the conduction and switching loss profile. Confirm that the TO-247 MAX package fits the available PCB or chassis mounting constraints.
Single FETs, MOSFETs Part Context
This part belongs to the APT series of high-voltage power MOSFETs produced by Microchip Technology. It utilizes the Power MOS 8 generation technology, which is designed to provide improved figure-of-merit compared to previous generations. The device is categorized under discrete transistors and is distinct from other variants like the APT56M50L due to its specific package type.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with APT56M50L if a TO-264 package variant is acceptable. Verify compatibility with APT84M50B2 only if higher current ratings are permissible.
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