APT5SM170S

Single FETs, MOSFETs Overview

The APT5SM170S is a Silicon Carbide (SiC) FET manufactured by Microsemi Corporation. It features an N-channel configuration with a drain-source voltage rating of 1700V and a continuous drain current of 4.6A. The component is housed in a D3PAK package, designed for high-voltage power switching applications requiring robust thermal performance and low on-state resistance typical of SiC technology.

Single FETs, MOSFETs Feature Summary

• Utilizes Silicon Carbide semiconductor material for enhanced high-temperature operation
• Provides high breakdown voltage capability suitable for demanding power systems
• Integrated single FET design simplifies circuit layout

Single FETs, MOSFETs Applications

• High-voltage DC-DC converters
• Industrial motor drives
• Uninterruptible power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer status as Microsemi's semiconductor assets were acquired by Microchip Technology. Confirm availability through authorized distributors or legacy stock channels, as this part may be listed as no longer newly manufactured. Ensure documentation references the correct entity holding the intellectual property rights for accurate datasheet access.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage isolation and efficient switching at elevated temperatures. The D3PAK package offers a balance between power handling and board space. Consider thermal management requirements due to the discrete nature of the device and its specific current ratings compared to higher-capacity modules.

Single FETs, MOSFETs Part Context

This device belongs to the family of Silicon Carbide power switches developed by Microsemi. These components are engineered to replace traditional silicon IGBTs or MOSFETs in applications where efficiency, size, and thermal resilience are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives from Microchip Technology following the acquisition. Verify if newer generation SiC FETs offer improved Rds(on) or gate charge characteristics while maintaining the 1700V rating and D3PAK footprint.