APT6021BFLLG

Single FETs, MOSFETs Overview

The APT6021BFLLG is a Power MOS 7 N-Channel enhancement mode power MOSFET manufactured by Microchip Technology. It features a maximum drain-source voltage of 600 V and a continuous drain current of 29 A at case temperature. The device exhibits a maximum on-state resistance of 210 mΩ and a peak pulsed drain current of 116 A. Packaged in a TO-247 through-hole housing, it supports a total power dissipation of 400 W with an operating junction temperature range up to 175°C.

Single FETs, MOSFETs Feature Summary

• Power MOS 7 technology combines low conduction and switching losses with fast switching speeds via a patented metal gate structure.
• Optimized for high-voltage applications with significantly reduced input capacitance, Miller capacitance, and gate charge.
• Designed as a FREDFET (Fast Recovery FET) to address both conduction and switching efficiency requirements.

Single FETs, MOSFETs Applications

• High-voltage power conversion systems
• Industrial motor control drives
• Uninterruptible power supply (UPS) circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'BFLLG' against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides original Microchip Technology documentation. Confirm that the TO-247 package dimensions match your PCB footprint requirements before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation and efficient switching are required. The 600V rating suits medium-to-high voltage DC-DC converters. Consider the 29A continuous current limit and 210mΩ Rds(on) for thermal management calculations. The TO-247 package facilitates heatsinking for high-power dissipation scenarios up to 400W.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS 7 family of N-Channel enhancement mode MOSFETs from Microchip Technology. It utilizes advanced silicon gate technology to achieve superior performance compared to standard MOSFETs. The series is engineered for applications demanding low loss and high reliability in power electronics environments.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same Power MOS 7 family or other 600V N-Channel MOSFETs with comparable Rds(on) and current ratings. Verify pinout compatibility for TO-247 packages. Ensure replacement devices meet the same thermal and electrical specifications for seamless integration.