APT77N60BC6

Single FETs, MOSFETs Overview

The APT77N60BC6 is a single N-channel Power MOSFET manufactured by Microchip Technology, utilizing CoolMOS Superjunction technology. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 77 A at case temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 41 mΩ at 10 V gate drive. Key electrical parameters include a maximum gate charge (Qg) of 308 nC at 10 V, a threshold voltage (Vgs(th)) of 3 V at 250 µA, and a maximum power dissipation of 481 W at case temperature. The component operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247 [B] package.

Single FETs, MOSFETs Feature Summary

• Employs CoolMOS Superjunction technology to achieve high efficiency with very low conduction and switching losses.
• Features low gate charge characteristics to reduce gate drive requirements and enable faster operation speeds.
• Incorporates fast recovery body diode performance suitable for demanding switching and amplifying applications.

Single FETs, MOSFETs Applications

• High-efficiency power switching circuits
• Amplifying applications requiring fast switching capabilities
• Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix BC6 against official Microchip documentation to confirm pinout and thermal specifications. Confirm RoHS compliance status as per the latest datasheet revision. Check for any product change notices or obsolescence alerts prior to finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 600 V blocking capability with moderate current handling up to 77 A. The TO-247 [B] package facilitates through-hole mounting and heatsink attachment. Ensure gate drive voltage supports the specified Rds(on) conditions for optimal thermal performance.

Single FETs, MOSFETs Part Context

This part belongs to the APT77N60 series of high-voltage discrete semiconductors from Microchip Technology. It represents an evolution in CoolMOS technology, offering improved thermal capabilities and lower switching losses compared to earlier generations. The device is designed for robust performance in industrial and consumer power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 600 V N-channel MOSFETs in TO-247 packages with comparable Rds(on) and Qg values. Verify pin compatibility and thermal resistance specifications before substitution. Consult Microchip's official cross-reference tools for validated alternatives.