APT7F120B

Single FETs, MOSFETs Overview

APT7F120B is a Power MOS 8™ N-channel FREDFET with a 1.2 kV drain-source breakdown voltage and a maximum continuous drain current of 7 A. It features a low on-resistance of 2.4 Ohms, a gate charge of 80 nC, and operates within a temperature range from -55°C to +150°C. The device dissipates up to 335 W of power and utilizes a TO-247-3 through-hole package.

Single FETs, MOSFETs Feature Summary

• Incorporates fast recovery body diode characteristics for high commutation dv/dt ruggedness
• Optimized for quiet switching with minimal electromagnetic interference emissions
• Designed for stable parallel operation in high-frequency applications

Single FETs, MOSFETs Applications

• Power factor correction circuits
• Server and telecom power systems
• Solar inverters
• Induction heating equipment
• Arc welding and plasma cutting machinery

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm that the component matches the exact electrical specifications required for your design before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this part when a fast-recovery intrinsic body diode is necessary for zero-voltage switching reliability. Consider the TO-247-3 package for through-hole mounting requirements and evaluate thermal management needs based on the specified power dissipation limits.

Single FETs, MOSFETs Part Context

The APT7F120B belongs to the Power MOS 8™ family, representing Microchip's latest generation of high-speed, high-voltage silicon transistors. This series focuses on reducing EMI and cost while maintaining robust performance for switch-mode power applications exceeding 500W.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip documentation for verified cross-reference part numbers. Do not substitute without confirming identical pinout, voltage ratings, and thermal characteristics.