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APT8043BLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 20A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT8043BLLG
- Description：MOSFET N-CH 800V 20A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：430mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：85 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT8043BLLG
Single FETs, MOSFETs Overview
The Microchip Technology APT8043BLLG is a single N-channel power MOSFET designed for high-voltage switching applications. It features an 800 V drain-to-source breakdown voltage and supports a continuous drain current of 20 A at case temperature. The device utilizes Power MOS 7 technology to achieve low on-resistance, enhancing efficiency in power conversion circuits. Packaged in a TO-247 [B] through-hole format, it provides robust thermal performance and mechanical stability for industrial and automotive environments.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 800 V drain-source breakdown rating
- Optimized on-resistance via Power MOS 7 technology
- Through-hole mounting for reliable thermal management
Single FETs, MOSFETs Applications
- Industrial motor control systems
- Automotive power electronics
- High-voltage DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix LLG against official Microchip documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides original manufacturer traceability. Confirm RoHS compliance status directly from the latest datasheet revision before integration into production designs.
Single FETs, MOSFETs Selection Notes
Select this component when an 800 V rating is required for high-side or low-side switching. Evaluate the 20 A continuous current limit against peak load requirements. Consider the TO-247 package size for available PCB real estate and heatsinking capabilities compared to surface-mount alternatives.
Single FETs, MOSFETs Part Context
This part belongs to Microchip's discrete power transistor portfolio, leveraging advanced silicon processes for improved switching speed and reduced conduction losses. It serves as a critical active switch in medium-power inversion and rectification stages where reliability under high electrical stress is paramount.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent 800 V N-channel MOSFETs in TO-247 packages. Verify that any alternative matches the pin configuration and thermal resistance specifications to ensure compatibility with existing board layouts.
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