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APT80GA90B2D40 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 34A T-MAX. Review the specifications below when checking this part for your BOM.
The APT80GA90B2D40 is a single IGBT from Microchip Technology, utilizing PT technology. It features a collector-emitter voltage of 900 V and a continuous collector current of 145 A at 25°C. The device has a maximum power dissipation of 625 W and operates within a junction temperature range of -55°C to +150°C. Packaged in TO-247-3 for through-hole mounting, it offers a saturation voltage of 2.5 V.
Verify the specific suffix D40 against official Microchip documentation to confirm package type and tape/reel specifications. Ensure compatibility with existing PCB footprints for TO-247-3 packages. Cross-reference electrical parameters with the latest datasheet to avoid discrepancies from legacy part numbers.
Select this component for high-voltage applications requiring robust switching capabilities. Consider the 900 V rating for systems operating near this threshold. Evaluate thermal management requirements given the 625 W dissipation limit. Compare gate charge characteristics if switching speed optimization is critical for the specific design.
This part belongs to Microchip's discrete IGBT portfolio, designed for general-purpose power switching. It complements other devices in the APT series, offering a balance of voltage handling and current capacity. The TO-247-3 package provides a standard form factor for through-hole integration in various power electronics designs.
Check for direct substitutes like APT80GA90B or APT80GA90LD40, ensuring pinout and parameter alignment. Verify that alternative parts meet the same voltage and current ratings without compromising system reliability.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
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