APT80SM120B

$26.30

Description：SICFET N-CH 1200V 80A TO247
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:e2f1445c5561 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT80SM120B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is SICFET N-CH 1200V 80A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT80SM120B

Description：SICFET N-CH 1200V 80A TO247
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：235 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：555W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT80SM120B

APT80SM120B

Single FETs, MOSFETs Overview

The APT80SM120B is a Silicon Carbide (SiC) N-Channel MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 80 A at case temperature (Tc). The device supports a maximum power dissipation of 555 W at Tc. It utilizes a TO-247 through-hole package, suitable for high-voltage power discrete applications.

Single FETs, MOSFETs Feature Summary

Utilizes Silicon Carbide (SiC) technology for enhanced thermal performance
Supports high-voltage operation up to 1200 V
Designed for high-power switching applications

Single FETs, MOSFETs Applications

Industrial power supplies
High-efficiency motor drives
Uninterruptible power systems (UPS)

Single FETs, MOSFETs Procurement Notes

Verify component authenticity due to the obsolete lifecycle status. Confirm that the TO-247 pinout matches the target design requirements. Ensure thermal management solutions accommodate the specified power dissipation limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high breakdown voltage and robust thermal handling in a standard through-hole footprint. Consider the specific gate charge characteristics for driver compatibility. Evaluate the trade-off between conduction losses and switching frequency capabilities inherent to SiC devices.

Single FETs, MOSFETs Part Context

This part belongs to the Microsemi (now Microchip) high-voltage power discrete portfolio. It represents a transition from traditional silicon to wide-bandgap materials in the company's catalog. The TO-247 form factor ensures compatibility with existing heatsinking infrastructure common in industrial electronics.