Single FETs, MOSFETs APT80SM120J product image

APT80SM120J

$39.76
  • Description:SICFET N-CH 1200V 51A SOT227
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk

SKU:2738c3e13b42 Category: Brand:

  
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APT80SM120J is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is SICFET N-CH 1200V 51A SOT227. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT80SM120J

  • Description:SICFET N-CH 1200V 51A SOT227
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:55mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:235 nC @ 20 V
  • Vgs (Max):+25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):273W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:SOT-227
  • Package / Case:SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT80SM120J

APT80SM120J

Single FETs, MOSFETs Overview

The APT80SM120J is a Silicon Carbide N-Channel Power MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 51 A at case temperature. The device utilizes the SOT-227 package for chassis mounting. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±30 V, a gate charge (Qg) of 300 nC at 10 V, and an input capacitance (Ciss) of 7736 pF at 25 V. The component operates within a junction temperature range of -40°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for high-voltage power switching applications.
  • Designed for chassis mounting using the SOT-227 package format.
  • Features low on-state resistance characteristics typical of SiC MOSFETs.

Single FETs, MOSFETs Applications

  • High voltage power conversion systems
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer source, as Microsemi's semiconductor assets were acquired by Microchip Technology. Confirm the part status, as listings may indicate end-of-life or obsolete status. Ensure the datasheet revision matches the required technical specifications for your design. Check for any RoHS compliance documentation if environmental regulations apply to your project.

Single FETs, MOSFETs Selection Notes

Select this component when a 1200 V rating and approximately 50 A continuous current capability are required in a chassis-mountable form factor. Consider the thermal management requirements associated with the SOT-227 package. Evaluate the switching speed advantages of Silicon Carbide over silicon alternatives for efficiency gains in high-frequency applications.

Single FETs, MOSFETs Part Context

This component belongs to the family of high-voltage discrete semiconductors produced by Microsemi. It is distinct from standard silicon MOSFETs due to its wide bandgap material. Similar parts in the lineup often share the SP1 or SOT-227 packaging but vary in current ratings and voltage thresholds. The product line targets robust industrial and automotive power electronics environments.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed direct substitute part numbers are not available in the provided data. Designers should consult official cross-reference guides from Microchip Technology for compatible replacements. Verify pinout compatibility and thermal resistance values before substituting with components from other manufacturers.

APT80SM120JAPT80SM120J
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