APTM100DA18CT1G

$68.43

Description：MOSFET N-CH 1000V 40A SP1
Series：POWER MOS 8™
Mfr：Microsemi Corporation
Package：Bulk

SKU:119b85ebeb0d Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APTM100DA18CT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1000V 40A SP1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM100DA18CT1G

Description：MOSFET N-CH 1000V 40A SP1
Series：POWER MOS 8™
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：216mOhm @ 33A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：570 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：14800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：657W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SP1
Package / Case：SP1

Single FETs, MOSFETs datasheet and documents for APTM100DA18CT1G

APTM100DA18CT1G

Single FETs, MOSFETs Overview

The APTM100DA18CT1G is a N-Channel POWER MOS 8™ MOSFET designed for high-voltage applications. It features a drain-source voltage of 1000V and a continuous drain current of 40A at case temperature. The device integrates a boost chopper MOSFET with a SiC chopper diode in an SP1 package.

Single FETs, MOSFETs Feature Summary

Integrates a boost chopper MOSFET with a Silicon Carbide (SiC) chopper diode
Designed specifically for high-voltage power applications

Single FETs, MOSFETs Applications

Boost chopper circuits
High-voltage power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the exact part number suffix against official Microchip documentation to ensure correct component specifications. Confirm package type and thermal characteristics match your design requirements before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring integrated high-voltage switching and fast recovery diode functionality. Ensure thermal management solutions accommodate the specific power dissipation ratings defined in the datasheet.

Single FETs, MOSFETs Part Context

This module belongs to the POWER MOS 8™ series from Microsemi, focusing on high-performance discrete and power modules. It combines advanced MOSFET technology with SiC diodes for improved efficiency in demanding power electronics environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Generic replacements may not match the integrated SiC diode or specific electrical characteristics.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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