APTM100U13SG

$99.63

Description：MOSFET N-CH 1000V 65A MODULE
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:ca05b355f37c Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APTM100U13SG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1000V 65A MODULE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM100U13SG

Description：MOSFET N-CH 1000V 65A MODULE
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：145mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：2000 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：31600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1250W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：Module
Package / Case：J3 Module

Single FETs, MOSFETs datasheet and documents for APTM100U13SG

APTM100U13SG

Single FETs, MOSFETs Overview

The APTM100U13SG is a Power MOS V® MOSFET power module manufactured by Microsemi Corporation. It integrates a single switch and series/parallel diodes within an isolated package designed for direct heatsink mounting. The device features a Drain-Source Breakdown Voltage of 1000 V, a maximum continuous drain current of 65 A at 25°C case temperature, and a typical Drain-Source ON Resistance of 130 mΩ. It supports high-frequency operation with low input and Miller capacitance, rated avalanche energy, and a Kelvin source configuration to minimize stray inductance.

Single FETs, MOSFETs Feature Summary

Integrates a rugged Power MOS V® MOSFET with low on-resistance and low gate charge characteristics.
Includes integrated series and parallel diodes within a single isolated module.
Features a Kelvin source connection to facilitate easy drive and reduce stray inductance.

Single FETs, MOSFETs Applications

Motor control systems
Switched Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' against official documentation to confirm compliance status or material composition differences compared to the base model. Confirm thermal interface requirements and mounting torque specifications for the M4 and M6 terminals during integration. Ensure electrostatic discharge handling procedures are followed due to component sensitivity.

Single FETs, MOSFETs Selection Notes

Select this module for applications requiring high voltage isolation and robust switching performance. Evaluate the thermal resistance and operating junction temperature range against system cooling capabilities. Consider the integrated diode configurations for simplified circuit design in power conversion topologies.

Single FETs, MOSFETs Part Context

This component belongs to the Power MOS V® MOSFET family produced by Microsemi Corporation. It is classified as a MOSFET Power Module designed for high-power industrial applications. The product line emphasizes ruggedness and efficiency in power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible modules with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing existing designs.