AS1M025120P

$26.58

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube

SKU:4b17269d3047 Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

AS1M025120P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is N-CHANNEL SILICON CARBIDE POWER. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS1M025120P

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id：4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：195 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：3600 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：463W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AS1M025120P

AS1M025120P

Single FETs, MOSFETs Overview

The AS1M025120P is an N-Channel Silicon Carbide Power MOSFET in a TO-247-3 package. It features a 1200V drain-source voltage and a maximum on-resistance of 34mΩ at VGS=20V. The device supports a continuous drain current of 90A at 25°C and handles pulsed currents up to 250A. Key electrical parameters include a gate threshold voltage of 4.0V, total gate charge of 195nC, and reverse recovery time of 55ns. Thermal performance includes a junction-to-case resistance of 0.28°C/W and power dissipation of 463W.

Single FETs, MOSFETs Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling
Fast switching characteristics enabled by low capacitance values
Robust avalanche ruggedness for reliable operation under stress
Designed for easy paralleling and straightforward gate drive requirements

Single FETs, MOSFETs Applications

Solar inverters
Switch mode power supplies
High voltage DC/DC converters
Motor drivers
Pulsed power applications

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level against the datasheet document ID AS-3270001 Revision B before finalizing designs. Confirm that thermal management solutions accommodate the specified junction temperature limits and power dissipation ratings. Ensure gate drive voltages remain within the recommended operational range to prevent device damage. Cross-reference pinout configurations with the TO-247-3 package dimensions provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring superior thermal conductivity and switching speed compared to silicon alternatives. Evaluate the 1200V rating against system peak voltages to ensure adequate safety margins. Consider the 34mΩ on-resistance impact on conduction losses at the target operating current. Assess the gate charge requirements to determine appropriate driver capabilities for the desired switching frequency.

Single FETs, MOSFETs Part Context

This silicon carbide MOSFET belongs to the high-power semiconductor category designed for demanding energy conversion environments. It utilizes advanced SiC technology to achieve higher efficiency and power density than traditional silicon devices. The TO-247-3 package facilitates robust mounting and heat sinking for industrial-grade power electronics systems.

Single FETs, MOSFETs Replacement Considerations

Consult manufacturer cross-reference tools for compatible substitutes. Verify that any alternative device matches the 1200V rating, TO-247-3 footprint, and electrical specifications before implementation.