AS2302

$0.14

Description：N-CHANNEL ENHANCEMENT MODE MOSFE
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b61a209af8a4 Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

AS2302 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is N-CHANNEL ENHANCEMENT MODE MOSFE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS2302

Description：N-CHANNEL ENHANCEMENT MODE MOSFE
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：55mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.81 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：220 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for AS2302

AS2302

Single FETs, MOSFETs Overview

The AS2302 is an N-Channel Enhancement Mode MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It features a Drain-Source Voltage (VDS) of 20V and a continuous Drain Current (ID) of 3.0A. The device utilizes advanced trench process technology to achieve ultra-low on-resistance, specified as 55mΩ maximum at VGS=4.5V and ID=3A, or 80mΩ at VGS=2.5V and ID=2A. Key dynamic parameters include a total gate charge (Qg) of 3.81nC and input capacitance (Ciss) of 220pF. The component is housed in a SOT-23 package with a junction temperature rating up to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench process technology for high density cell design
Ultra-low on-resistance characteristics optimized for efficiency
Surface-mount SOT-23 packaging for space-constrained applications

Single FETs, MOSFETs Applications

Load Switch for Portable Devices
DC/DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision status before integration, as manufacturing updates may occur. Confirm that the SOT-23 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the 0.7W power dissipation limit at 25°C ambient conditions. Validate that the 20V voltage rating provides sufficient margin for your target circuit's peak operating voltages.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-Channel MOSFET is required for low-voltage switching applications. The 20V rating suits systems operating below this threshold. Consider the 55mΩ on-resistance for minimizing conduction losses in portable battery-powered devices. Verify that the gate drive voltage levels are compatible with the specified threshold and on-resistance test conditions.

Single FETs, MOSFETs Part Context

This part belongs to the family of N-Channel Enhancement Mode MOSFETs produced by ANBON SEMICONDUCTOR (INT'L) LIMITED. The manufacturer specializes in power semiconductor solutions for automotive and industrial markets. The AS2302 represents their standard discrete transistor offerings designed for general-purpose switching tasks within compact form factors.