Single FETs, MOSFETs ATP216-TL-H product image

ATP216-TL-H

  • Description:MOSFET N-CH 50V 35A ATPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:299cdd5d4f25 Category: Brand:

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ATP216-TL-H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 50V 35A ATPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ATP216-TL-H

  • Description:MOSFET N-CH 50V 35A ATPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):50 V
  • Current - Continuous Drain (Id) @ 25°C:35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:23mOhm @ 18A, 4.5V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:30 nC @ 4.5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:2700 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):40W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:ATPAK
  • Package / Case:ATPAK (2 Leads+Tab)

Single FETs, MOSFETs datasheet and documents for ATP216-TL-H

ATP216-TL-H

Single FETs, MOSFETs Overview

The ATP216-TL-H is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an ATPAK-3 surface-mount package with two leads and a tab. The device features a drain-source breakdown voltage of 50 V and supports a continuous drain current of 35 A at ambient temperature. Its maximum on-resistance is 23 mOhms at 4.5 V gate drive. The component operates within a junction temperature range up to 150 °C and has a maximum power dissipation of 40 W when case-mounted.

Single FETs, MOSFETs Feature Summary

  • Single N-channel enhancement mode configuration for efficient switching control
  • ATPAK-3 surface-mount package design optimized for thermal performance
  • Silicon-based construction supporting high-temperature operation

Single FETs, MOSFETs Applications

  • Power switching circuits requiring low on-resistance
  • DC-DC converter topologies
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels as the part status is listed as obsolete. Confirm RoHS compliance details via official documentation before integration. Check for specific lead finish variations such as Tin/Bismuth if required by assembly processes. Ensure ECAD models match the final revision used in production designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications needing a 50 V rating with moderate current handling capabilities. The ATPAK package offers superior thermal dissipation compared to standard SMD packages. Consider the 23 mOhm on-resistance for efficiency calculations under 4.5 V gate drive conditions. Evaluate thermal management requirements based on the 40 W case-mounted power dissipation limit.

Single FETs, MOSFETs Part Context

This device belongs to the ATP216 series of power MOSFETs from onsemi. The series focuses on providing robust switching performance in compact surface-mount formats. The ATPAK packaging distinguishes these parts by integrating a large thermal pad for direct heat sinking, enhancing reliability in power-dense environments.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.

ATP216-TL-HATP216-TL-H

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