Single FETs, MOSFETs AUIRF1010Z product image

AUIRF1010Z

$1.11
  • Description:MOSFET N-CH 55V 75A TO220AB
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:1ab9e4700e2c Category: Brand:

  
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AUIRF1010Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 55V 75A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF1010Z

  • Description:MOSFET N-CH 55V 75A TO220AB
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:2840 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRF1010Z

AUIRF1010Z

Single FETs, MOSFETs Overview

The AUIRF1010Z is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced process technology to deliver a maximum drain-source voltage of 55 V and a continuous drain current of 44 A at 25°C. The device features a typical on-resistance of 7.5 mΩ at 10 V gate drive and a total gate charge of 63 nC. Packaged in the D2PAK (TO-263-3) surface-mount format, it supports junction temperatures up to 175°C and meets AEC-Q100 qualification standards for automotive reliability.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified to AEC-Q100 standards for enhanced reliability in vehicle applications
  • Advanced silicon process technology enabling low on-resistance and efficient switching performance
  • Robust thermal management capabilities supporting high junction temperature operation

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side load switch circuits
  • DC motor control applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm specific ordering suffixes match required packaging formats such as tape and reel. Ensure compliance with RoHS directives and REACH regulations relevant to the target market. Check for obsolescence status as this component may be subject to lifecycle changes.

Single FETs, MOSFETs Selection Notes

Select this component when automotive qualification and high current handling are required within a 55 V system. Compare against non-automotive equivalents like IRFR1010Z if cost sensitivity outweighs reliability requirements. Consider package thermal resistance and PCB layout constraints to maximize heat dissipation efficiency during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs designed for high-efficiency switching. It represents the automotive variant of the standard IRF1010 series, distinguished by stricter manufacturing controls and qualification testing. The D2PAK package provides a balance between current capacity and board space efficiency for industrial and automotive electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the IRFR1010Z for non-automotive use or the IRF1010NSTRL for similar D2PAK specifications. Verify pin compatibility and electrical parameters before substitution. Automotive designs should prioritize components with matching AEC-Q100 ratings.

AUIRF1010ZAUIRF1010Z
$1.11
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