AUIRF1010Z

Description：MOSFET N-CH 55V 75A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:1ab9e4700e2c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF1010Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 75A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF1010Z

Description：MOSFET N-CH 55V 75A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：7.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：2840 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：140W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRF1010Z

AUIRF1010Z

Single FETs, MOSFETs Overview

The AUIRF1010Z is an N-channel HEXFET power MOSFET with a drain-source voltage of 55 V and a maximum on-resistance of 7.5 mΩ at 10 V gate drive. It supports a continuous silicon-limited drain current of 94 A at 25°C case temperature, or 75 A package-limited. The device operates within a junction temperature range of -55°C to +175°C and features fast switching characteristics. It is available in TO-220AB, D2-Pak, and TO-262 packages.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Advanced process technology for ultra-low on-resistance
Supports repetitive avalanche operation up to maximum junction temperature

Single FETs, MOSFETs Applications

Automotive applications
High-efficiency power conversion systems
General-purpose switching circuits requiring high reliability

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required (TO-220AB, D2-Pak, or TO-262) as the base number applies to multiple form factors. Confirm that the application environment remains within the specified thermal limits and does not exceed the absolute maximum ratings for avalanche energy or pulsed currents. Ensure compliance with automotive qualification requirements if used in vehicle systems.

Single FETs, MOSFETs Selection Notes

Select this component when a 55 V rating and low conduction losses are critical. The device offers high current capability suitable for demanding power stages. Consider the thermal resistance and package type based on the available cooling solution. Verify that the gate drive voltage aligns with the 10 V specification for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to minimize resistance per silicon area. The product line includes variants with different packaging options to suit various mounting and thermal management needs in industrial and automotive electronics.