AUIRF2804S-7P

Single FETs, MOSFETs Overview

The AUIRF2804S-7P is an automotive-grade N-channel HEXFET power MOSFET in a D2PAK-7 package. It features a 40V drain-source breakdown voltage and ultra-low on-resistance of 1.6mΩ max at VGS=10V, ID=160A. The device supports continuous drain currents up to 320A (silicon limited) or 240A (package limited), with a pulsed current rating of 1360A. Maximum power dissipation is 330W at 25°C case temperature. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for reliability
• Advanced process technology achieving extremely low on-resistance
• Fast switching speed with improved repetitive avalanche rating
• Lead-free construction compliant with RoHS directives

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-current DC-DC conversion circuits
• Motor control applications requiring robust avalanche performance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging format, as tube and tape-and-reel options exist within this family. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your target automotive platform. Ensure thermal management designs account for the specified linear derating factor and junction-to-case resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical for efficiency in 40V automotive environments. The D2PAK-7 package provides enhanced thermal performance compared to standard three-terminal variants. Consider the high pulsed current capability if the application involves significant inrush currents or short-circuit protection scenarios requiring robust device survival.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET power MOSFET portfolio, specifically designed for high-current automotive applications. It utilizes advanced processing techniques to minimize silicon area resistance while maintaining high reliability. The device integrates body diode characteristics suitable for synchronous rectification or freewheeling duties in motor drives and power supplies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IRF2804S-7PPBF and IRFS3004-7P, though electrical parameters such as on-resistance and current ratings may differ. Verify pinout compatibility and thermal resistance specifications before substitution. Ensure any replacement maintains the required automotive qualification level if used in safety-critical systems.