AUIRF2903ZL

Single FETs, MOSFETs Overview

The AUIRF2903ZL is an automotive-grade, single N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 30V and a typical on-resistance of 1.9mΩ at VGS=10V. The device supports continuous drain currents up to 160A (package limited) and peak pulsed currents of 1020A. Operating junction temperatures range from -55°C to +175°C. Key electrical characteristics include a gate threshold voltage between 2.0V and 4.0V, total gate charge of 160nC typ., and a thermal resistance junction-to-case of 0.65°C/W max.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards
• Advanced process technology enabling ultra-low on-resistance per silicon area
• Fast switching speed combined with improved repetitive avalanche rating
• Robust thermal performance supporting operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-side and low-side load switches
• DC-DC converter circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package configuration. The ZL suffix corresponds to the TO-262 tube packaging format. Confirm that the component meets the necessary AEC-Q101 qualification requirements for your target automotive application. Ensure compatibility with standard surface-mount assembly processes for the selected package type.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET with automotive reliability is required. The low on-resistance minimizes conduction losses in high-current scenarios. Consider the thermal resistance and package limitations when designing heat dissipation strategies. Verify that the gate drive voltage aligns with the specified threshold and full enhancement requirements for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's automotive-grade HEXFET family, utilizing specialized processing techniques to achieve high current density and efficiency. It is designed to meet the rigorous demands of automotive environments, offering enhanced ruggedness compared to standard industrial components. The product line emphasizes reliability and performance in demanding power management roles.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 30V voltage rating, N-channel polarity, and TO-262 package footprint. Verify that substitute components meet or exceed the 1.9mΩ on-resistance and 160A current handling capabilities. Ensure any alternative parts also hold AEC-Q101 certification if automotive qualification is mandatory for the system design.

Single FETs, MOSFETs FAQ

Is the AUIRF2903ZL qualified for automotive applications?

Yes, the AUIRF2903ZL is specifically designed for automotive applications and has passed AEC-Q101 qualification standards.

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current (IDM) is 1020A, subject to pulse width limitations defined by the maximum junction temperature.

Can the device handle repetitive avalanche energy?

Yes, the device allows repetitive avalanche operation up to the maximum junction temperature, with specific limits detailed in the datasheet figures regarding avalanche current and energy.