AUIRF3710ZS

Description：MOSFET N-CH 100V 59A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:e8dc304a3801 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF3710ZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 59A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3710ZS

Description：MOSFET N-CH 100V 59A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：160W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF3710ZS

AUIRF3710ZS

Single FETs, MOSFETs Overview

The AUIRF3710ZS is an automotive-grade HEXFET power MOSFET manufactured by Infineon Technologies. It features a single N-channel enhancement mode configuration housed in a D2PAK (TO-263) surface-mount package. The device supports a drain-source breakdown voltage of 100 V and delivers a continuous drain current of 59 A at 25°C case temperature. Its static drain-to-source on-resistance is rated at 18 mΩ, with a maximum gate threshold voltage of 4.0 V. The component operates within a junction temperature range of -55°C to +175°C and dissipates up to 160 W of power.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards for reliability in vehicle environments
Optimized silicon architecture achieving low on-resistance per unit area for high efficiency
Capable of handling repetitive avalanche energy conditions without exceeding maximum junction temperature limits
Designed for fast switching speeds to minimize dynamic losses in power conversion circuits

Single FETs, MOSFETs Applications

Automotive power distribution systems
Motor control applications requiring robust switching performance
High-current load switching in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the packaging format, as the base part number corresponds to tube packaging while reel options require distinct suffixes. Confirm that the procurement channel provides original manufacturer documentation to ensure compliance with automotive quality standards. Check for any recent process change notifications associated with the AU prefix designation before finalizing supply agreements.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that demand automotive-grade reliability combined with high current handling capabilities. The 18 mΩ on-resistance makes it suitable for minimizing conduction losses in power paths. Ensure the thermal management design accommodates the specified junction temperature range and power dissipation ratings under worst-case operating conditions.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to enhance performance metrics compared to standard industrial counterparts. The AU prefix indicates adherence to automotive industry requirements regarding product discontinuance and process change notifications, distinguishing it from non-automotive variants.