Single FETs, MOSFETs AUIRF4905L product image

AUIRF4905L

$1.83
  • Description:AUIRF4905 - 20V-150V P-CHANNEL A
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk

SKU:904e02434a64 Category: Brand:

  
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AUIRF4905L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is AUIRF4905 - 20V-150V P-CHANNEL A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF4905L

  • Description:AUIRF4905 - 20V-150V P-CHANNEL A
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:20mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262
  • Package / Case:TO-262

Single FETs, MOSFETs datasheet and documents for AUIRF4905L

AUIRF4905L

Single FETs, MOSFETs Overview

The AUIRF4905L is an automotive-grade P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 55 V drain-source voltage rating and a continuous drain current of 42 A at case temperature, with a maximum on-resistance of 20 mΩ at 10 V gate drive. The device utilizes a TO-262 through-hole package, supporting a power dissipation of 200 W and operating junction temperatures up to 150°C. It holds AEC-Q101 qualification for automotive reliability.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified under the AEC-Q101 standard for enhanced reliability in vehicle environments.
  • Utilizes advanced fifth-generation HEXFET processing technology to achieve low on-resistance per silicon area.
  • Designed with ruggedized device architecture to support fast switching speeds and efficient power management.

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • Motor control applications
  • High-side load switching circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official Infineon documentation before integration. Confirm that the specific part number matches the required automotive grade and package variant. Ensure supply chain sources provide valid traceability records. Cross-reference datasheet revisions to confirm parameter consistency. Validate compliance with relevant environmental directives prior to final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade P-channel switching capabilities. The TO-262 through-hole package facilitates effective thermal management for high-power applications. Consider the 55 V voltage rating and 20 mΩ on-resistance for optimizing conduction losses. Evaluate the 42 A current capacity against peak load requirements to ensure safe operational margins within the specified temperature range.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon HEXFET family, specifically engineered for high-efficiency power switching. As an automotive-qualified device, it adheres to strict quality standards required for vehicle electronics. The P-channel configuration allows for direct high-side driving in many common control architectures, simplifying gate driver design compared to N-channel alternatives in similar voltage classes.

Single FETs, MOSFETs Replacement Considerations

The IRF4905PBF serves as a non-automotive equivalent within the same product family. While sharing identical electrical specifications and pinout compatibility, the IRF4905PBF lacks AEC-Q101 certification. Designers must verify if automotive qualification is mandatory for the target application before substituting this part.

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