AUIRF6215

Single FETs, MOSFETs Overview

The AUIRF6215 is an automotive-grade P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-220AB package with a maximum drain-to-source voltage of -150 V and a continuous drain current of -13 A at 25°C case temperature. The device exhibits a maximum static drain-to-source on-resistance of 0.29 Ω at VGS = -10 V and ID = -6.6 A. It supports a single pulse avalanche energy of 310 mJ and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for reliability in vehicle environments
• HEXFET cellular design architecture providing low on-resistance per silicon area
• Ruggedized device construction supporting fast switching speeds and high avalanche capability
• Integral reverse p-n junction diode with specified forward voltage and recovery characteristics

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-side load switching applications
• Motor control circuits
• Power management modules in vehicles

Single FETs, MOSFETs Procurement Notes

Verify the component matches the specific automotive grade designation indicated by the AU prefix. Confirm that the TO-220AB tube packaging aligns with assembly requirements. Ensure the supplier provides documentation confirming compliance with AEC-Q101 qualification standards. Check for RoHS compliance status as stated in the datasheet. Validate that the ordering information corresponds to the complete part number including quantity specifications.

Single FETs, MOSFETs Selection Notes

Evaluate the thermal resistance parameters to ensure adequate heat dissipation for the intended application. Consider the gate threshold voltage range when designing the driving circuitry. Assess the dynamic electrical characteristics, including gate charge and capacitance values, for switching performance requirements. Verify that the maximum ratings exceed the operational stresses expected in the system environment.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. The series utilizes advanced processing techniques to optimize performance metrics such as on-resistance and switching speed. The product line includes both standard and automotive-grade variants designed for diverse electronic applications ranging from consumer electronics to industrial systems.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IRF6215PBF and IRF6215-013PBF. These alternatives share similar electrical characteristics and package types but may lack the specific automotive qualification associated with the AU prefix. Verify pinout compatibility and thermal performance before implementation.

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy rating?

The device is rated for a maximum single pulse avalanche energy of 310 mJ under thermally limited conditions.

Does the component include an integral body diode?

Yes, the MOSFET symbol indicates an integral reverse p-n junction diode with specified continuous and pulsed source current ratings.

What is the internal source inductance value?

The internal source inductance is typically 7.5 nH, measured between the lead and the center of the die contact.