AUIRF7478Q

Single FETs, MOSFETs Overview

The AUIRF7478Q is an automotive-grade N-channel HEXFET power MOSFET in an SO-8 package. It features a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 7.0 A at 25°C. The maximum on-resistance (RDS(on)) is 26 mΩ at VGS = 10V, with a typical value of 20 mΩ. Gate threshold voltage ranges from 1.0 V to 3.0 V. Total gate charge is typically 21 nC. The device supports repetitive avalanche energy up to Tjmax and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability
• Advanced planar technology enables low on-resistance per silicon area
• Logic level gate drive capability for efficient control
• Fast switching speed combined with ruggedized device design

Single FETs, MOSFETs Applications

• Automotive electronic systems requiring robust power switching
• Low-side switching applications utilizing logic level gate drive
• General purpose power management circuits designed for automotive environments

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing process. The standard part number corresponds to tube packaging, while the AUIRF7478QTR variant utilizes tape and reel packaging containing 4000 units. Confirm package type compatibility during procurement to ensure alignment with assembly line requirements.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V rating and 7.0 A continuous current capacity are required in a compact surface-mount form factor. The logic level gate drive simplifies driver circuit design by allowing operation with lower gate voltages. Ensure thermal management strategies account for the specified junction-to-ambient thermal resistance values under expected operating conditions.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, which utilizes cellular design techniques to optimize performance. As an automotive-grade product, it meets stringent qualification standards compared to industrial or consumer grades. The SO-8 package provides a balance between thermal dissipation capabilities and space efficiency for printed circuit board layouts.

Single FETs, MOSFETs Replacement Considerations

Direct replacement requires verifying pinout compatibility and ensuring electrical parameters such as VDS, ID, and RDS(on) meet or exceed original design specifications. Check if the alternative device supports the same logic level gate drive requirements and thermal characteristics for the intended application environment.

Single FETs, MOSFETs FAQ

Is the AUIRF7478Q suitable for repetitive avalanche operations?

Yes, the datasheet specifies that repetitive avalanche is allowed up to the maximum junction temperature (Tjmax).

What is the peak diode recovery dv/dt rating for this MOSFET?

The peak diode recovery dv/dt rating is specified as 3.7 V/ns.