AUIRF7732S2TR

Single FETs, MOSFETs Overview

The AUIRF7732S2TR is an automotive-grade N-channel enhancement mode MOSFET from Infineon Technologies, utilizing HEXFET silicon technology and DirectFET SC packaging. It features a drain-source breakdown voltage of 40 V and a typical on-resistance of 5.5 mΩ at VGS = 10V. The device supports a continuous drain current of 55 A at TC = 25°C and a pulsed drain current of 220 A. Total gate charge is typically 30 nC. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Advanced DirectFET packaging provides dual-sided cooling capability for optimized thermal transfer in high-power density applications.
• Automotive qualification ensures robustness and reliability under demanding environmental conditions.
• Low parasitic parameters and small footprint contribute to efficient switching performance.
• High repetitive avalanche energy capability enhances system durability against transient events.

Single FETs, MOSFETs Applications

• Automotive motor drive systems
• High-frequency DC-DC converters
• Heavy load applications on ICE, HEV, and EV platforms

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets the intended automotive qualification standards before integration. Ensure compatibility with vapor phase, infrared, or convection soldering processes as specified in application notes. Validate PCB layout geometries against the DirectFET outline dimensions to ensure proper assembly and thermal performance.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance and minimal gate charge within a compact form factor. Consider the 40 V rating and 55 A continuous current capability for appropriate load matching. Evaluate thermal management requirements given the dual-sided cooling potential of the DirectFET package. Ensure driver circuits can handle the specified gate threshold voltage and total gate charge characteristics effectively.

Single FETs, MOSFETs Part Context

This part belongs to the automotive-grade DirectFET power MOSFET family from Infineon Technologies. It combines advanced silicon processing with specialized packaging to deliver high efficiency and power density. The series is designed specifically for demanding automotive environments where space constraints and thermal performance are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes require matching the 40 V rating, 5.5 mΩ RDS(on), and DirectFET SC package. Verify equivalent automotive qualification status and thermal resistance characteristics. Cross-reference pinout configurations to ensure compatibility with existing board layouts without redesign.

Single FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175°C.

Does the device support dual-sided cooling?

Yes, the DirectFET package allows for dual-sided cooling to maximize thermal transfer.

What is the typical total gate charge?

The typical total gate charge (Qg) is 30 nC.