AUIRF7805QTR

Single FETs, MOSFETs Overview

The AUIRF7805QTR is an automotive-qualified, dual N-channel HEXFET power MOSFET in a Dual SO-8 package. It features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 13A at 25°C. The typical on-resistance (RDS(on)) is 9.2mΩ with a maximum of 11mΩ at VGS=4.5V and ID=7.0A. Total gate charge (Qg) is typically 22nC. The device supports a junction temperature range of -55°C to +150°C and includes fast switching speed and improved repetitive avalanche rating.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for enhanced reliability
• Dual MOSFET die capability within a single surface mount SO-8 package
• Advanced planar technology achieving extremely low on-resistance per silicon area
• Logic level gate drive compatibility for efficient control

Single FETs, MOSFETs Applications

• Automotive power management systems
• High-efficiency motor control applications
• Power distribution circuits requiring compact form factors

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TR' indicates Tape & Reel packaging containing 4000 units. Confirm that the base part number AUIRF7805Q meets the required AEC-Q101 qualification level. Ensure the component is sourced from authorized Infineon distributors to guarantee authenticity and traceability for automotive-grade specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing automotive electronics requiring dual N-channel MOSFETs in a space-constrained SO-8 footprint. It is suitable for applications needing a 30V breakdown voltage and logic-level gate drive operation. Consider its thermal characteristics and repetitive avalanche rating for robust performance in high-reliability environments.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced processing techniques to optimize on-resistance and switching performance. The Dual SO-8 configuration allows for board space reduction compared to using two separate single MOSFET packages.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source material. Verify pinout compatibility and electrical parameters against alternative dual MOSFETs if cross-referencing is necessary.