AUIRF9Z34N-INF

Single FETs, MOSFETs Overview

The AUIRF9Z34N-INF is an automotive-grade, P-channel enhancement-mode power MOSFET from the Infineon HEXFET series. It utilizes silicon technology and features a TO-220AB through-hole package with three pins. The device provides a drain-source voltage of 55 V and supports a continuous drain current of 19 A. Key electrical characteristics include a maximum on-resistance of 100 mΩ and a typical gate charge of 35 nC at 10 V. It operates within a temperature range of -55 °C to +175 °C with a maximum power dissipation of 68 W.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability compliant with specific industry standards for harsh environments
• Integrated body diode with a forward voltage of approximately 1.6 V
• High thermal stability supporting junction temperatures up to 175 °C

Single FETs, MOSFETs Applications

• Automotive load switching applications
• Power management circuits in vehicle electronics
• Motor control systems requiring P-channel isolation

Single FETs, MOSFETs Procurement Notes

Verify the component status as discontinued or obsolete through official manufacturer channels before procurement planning. Confirm that the specific suffix denotes automotive qualification requirements. Ensure compatibility with existing PCB footprints and thermal management designs. Validate RoHS compliance documentation against current regulatory standards.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive-grade P-channel switching capabilities. Compare the 100 mΩ on-resistance and 19 A current rating against system load requirements. Evaluate the TO-220AB package suitability for through-hole assembly processes. Consider the 175 °C operating temperature limit for high-thermal environments.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs, designed for general-purpose and automotive power switching. It serves as the P-channel counterpart to N-channel variants like the IRFZ34N. The device integrates advanced trench technology to optimize conduction losses while maintaining rugged avalanche performance suitable for inductive loads.

Single FETs, MOSFETs Replacement Considerations

Consider the IRF9Z34NPBF for standard industrial applications if automotive qualification is not required. Verify pinout compatibility and thermal resistance values when substituting with other TO-220 packages.