AUIRF9Z34N

Single FETs, MOSFETs Overview

The AUIRF9Z34N is an automotive-grade P-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-220AB package with a maximum drain-source voltage of -55V and a continuous drain current of -19A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.10Ω at VGS = -10V. It supports junction temperatures up to +175°C and includes dynamic dv/dt rating capabilities. The component is fully avalanche rated, lead-free, RoHS compliant, and qualified under the AEC-Q101 standard for automotive applications.

Single FETs, MOSFETs Feature Summary

• Automotive qualification per AEC-Q101 standard
• Dynamic dv/dt rating for fast switching
• Fully avalanche rated with repetitive avalanche allowance
• Advanced planar technology for low on-resistance

Single FETs, MOSFETs Applications

• Automotive load switching
• High-side power control
• Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify that the specific part number matches the required automotive grade designation. Confirm the package type corresponds to TO-220AB for through-hole mounting. Ensure compliance with RoHS directives if environmental regulations apply to your assembly process. Check for any specific handling requirements related to ESD sensitivity during storage and installation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust performance in automotive environments. Consider its high thermal stability and ruggedized design for reliable operation under varying temperature conditions. Evaluate the need for avalanche energy handling and fast switching speeds in your specific application context before finalizing the design choice.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The device is designed for commercial-industrial applications but specifically meets automotive standards. It represents a fifth-generation enhancement in power switching efficiency and reliability.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the P-channel configuration, -55V breakdown voltage, and TO-220AB package. Verify equivalent current ratings and on-resistance values. Ensure any substitute also meets AEC-Q101 automotive qualification if used in vehicle systems. Cross-reference pinouts and thermal characteristics carefully.