AUIRFBA1405

Description：MOSFET N-CH 55V 95A SUPER-220
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:5554f12df732 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFBA1405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 95A SUPER-220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFBA1405

Description：MOSFET N-CH 55V 95A SUPER-220
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5mOhm @ 101A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5480 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：330W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：SUPER-220™ (TO-273AA)
Package / Case：TO-273AA

Single FETs, MOSFETs datasheet and documents for AUIRFBA1405

AUIRFBA1405

Single FETs, MOSFETs Overview

The AUIRFBA1405 is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes a Stripe Planar design to achieve low on-resistance per silicon area. The device is housed in a Super-220 package and is qualified to AEC-Q101 standards. Key electrical parameters include a maximum drain-to-source voltage of 55V, a typical static drain-to-source on-resistance of 4.3mΩ (maximum 5.0mΩ), and a continuous drain current capability of up to 174A when silicon-limited at 25°C case temperature. The gate threshold voltage ranges from 2.0V to 4.0V.

Single FETs, MOSFETs Feature Summary

Automotive grade qualification compliant with AEC-Q101 standards
Stripe Planar design for low on-resistance per silicon area
Ruggedized device design with fast switching speed
Wide Safe Operating Area (SOA) for reliable operation

Single FETs, MOSFETs Applications

Automotive power distribution systems
Low side switching applications
Motor control circuits
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package type against official Infineon documentation before procurement. Confirm that the component meets the required AEC-Q101 automotive qualification standards for your specific application environment. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive-grade reliability and high current handling capabilities within a 55V system. Consider the package limitations for continuous current ratings versus silicon-limited ratings when designing thermal management strategies. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, specifically designed for high-efficiency power switching. The 'AU' prefix indicates automotive qualification, while the 'IRFBA' designation identifies the specific product line and package configuration. It represents a specialized solution for demanding automotive environments where reliability and thermal performance are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. Ensure any alternative component matches the 55V rating, Super-220 package dimensions, and AEC-Q101 qualification status.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current for the AUIRFBA1405?

The maximum continuous drain current is 174A when limited by silicon at a case temperature of 25°C. When limited by the package, the current is rated at 95A.