AUIRFR120ZTRL

Description：MOSFET N-CH 100V 8.7A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:a0182ea11489 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AUIRFR120ZTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 8.7A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR120ZTRL

Description：MOSFET N-CH 100V 8.7A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id：4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：310 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR120ZTRL

AUIRFR120ZTRL

Single FETs, MOSFETs Overview

The AUIRFR120ZTRL is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (VDS) of 100 V and a typical on-resistance (RDS(on)) of 150 mΩ at VGS = 10 V, with a maximum limit of 190 mΩ. The device supports a continuous drain current (ID) of 8.7 A at 25°C case temperature and handles pulsed currents up to 35 A. It operates within a junction temperature range of -55°C to +175°C and includes repetitive avalanche capability.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Advanced process technology for ultra-low on-resistance
Fast switching speed with improved repetitive avalanche rating
Lead-free and RoHS compliant construction

Single FETs, MOSFETs Applications

Automotive power switching circuits
General purpose low-side switching
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TRL' corresponds to the Tape and Reel packaging format containing 3000 units per reel. Confirm that the component meets the required Automotive qualification level as defined by Infineon's extension of industrial and consumer grades from the higher automotive standard. Ensure compatibility with D-Pak (TO-252AA) footprint requirements during PCB design.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring robust thermal performance up to 175°C junction temperature. The low gate charge and fast switching characteristics make it suitable for applications demanding efficient power conversion. Consider the 190 mΩ maximum RDS(on) for conduction loss calculations under worst-case conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The device is specifically engineered for automotive applications, combining ruggedness with high efficiency. It is available in D-Pak and I-Pak packages.