AUIRFR2905ZTR

$1.08

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk

SKU:764a42efadce Category: Single FETs, MOSFETs Brand: International Rectifier

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Product introduction

AUIRFR2905ZTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 55V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR2905ZTR

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1380 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR2905ZTR

AUIRFR2905ZTR

Single FETs, MOSFETs Overview

The AUIRFR2905ZTR is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies, formerly International Rectifier. It features a 55V drain-source breakdown voltage and a continuous drain current of 42A at case temperature of 25°C. The device utilizes advanced processing techniques to achieve an ultra-low on-resistance of 14.5mΩ at a gate-source voltage of 10V. Designed for high reliability, it supports a maximum junction operating temperature of 175°C and allows repetitive avalanche energy. The component is housed in a DPAK-3 (TO-252-3) surface-mount package.

Single FETs, MOSFETs Feature Summary

Automotive-grade construction utilizing HEXFET technology for high reliability
Capable of withstanding repetitive avalanche energy conditions
Optimized for low conduction losses through ultra-low on-resistance
Supports high-temperature operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-efficiency DC-DC converters
Motor control applications
General switching circuits requiring automotive qualification

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'ZTR' against the manufacturer's official datasheet to confirm tape-and-reel packaging and lead-free status. Confirm that the component meets the required AEC-Q101 automotive reliability standards if applicable to your design. Check for end-of-life notices or obsolescence warnings from Infineon before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring robust performance under high thermal stress. The low on-resistance makes it suitable for applications prioritizing efficiency. Ensure the gate drive circuit can support the required threshold voltage for full enhancement. Consider the thermal resistance characteristics for proper heat dissipation in the TO-252 package.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR2905 family of automotive power MOSFETs. It shares core electrical specifications with variants such as IRFR2905ZTRPBF but may differ in packaging or compliance markings. The 'AU' prefix typically denotes automotive qualification. It is distinct from lower-voltage or non-automotive HEXFET devices within the same product line.