AUIRFR5410TRL

Single FETs, MOSFETs Overview

The AUIRFR5410TRL is an automotive-grade P-Channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source breakdown voltage of -100V and a continuous drain current rating of -13A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.205Ω at VGS = -10V, ensuring low conduction losses. It supports a maximum power dissipation of 66W and operates within a junction temperature range of -55°C to +150°C. The component is fully avalanche rated with a single pulse energy capability of 194mJ.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for enhanced reliability in vehicle environments.
• Advanced planar technology provides low on-resistance per silicon area for improved efficiency.
• Fast switching characteristics combined with ruggedized design optimize performance in demanding circuits.
• Fully avalanche rated allowing repetitive avalanche operation up to the maximum junction temperature.

Single FETs, MOSFETs Applications

• Automotive power switching systems
• Low-side and high-side load control
• General purpose switching applications requiring automotive qualification

Single FETs, MOSFETs Procurement Notes

Verify that the specific orderable part number matches the required tape and reel form factor. Confirm that the component meets the necessary AEC-Q101 qualification level for your target application environment. Ensure thermal management designs account for the specified junction-to-case resistance values under board-mounted conditions.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability is mandatory alongside high current handling capabilities. The D-Pak package offers a balance between thermal performance and surface mount convenience. Consider the gate charge requirements against your driver capabilities to ensure adequate switching speeds are achieved without excessive drive loss.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, utilizing cellular planar design techniques to minimize resistance while maintaining robust switching performance. The 'AU' prefix indicates automotive grade qualification, distinguishing it from standard industrial variants by adhering to stricter quality and reliability standards defined by AEC-Q101.

Single FETs, MOSFETs Replacement Considerations

The IRFR5410TRPBF serves as the non-automotive equivalent. Verify if the lack of AEC-Q101 qualification is acceptable for your specific application before substituting.

Single FETs, MOSFETs FAQ

Is the AUIRFR5410TRL suitable for repetitive avalanche operations?

Yes, the datasheet specifies that the device is fully avalanche rated and allows repetitive avalanche operation up to the maximum junction temperature of 150°C.

What is the peak diode recovery dv/dt rating for the body diode?

The peak diode recovery dv/dt rating is specified as -5.0 V/ns under conditions where ISD is less than or equal to -7.8A and di/dt is less than or equal to 200A/µs.