AUIRFS3206TRL

Description：MOSFET N-CH 60V 210A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:8845e5b5a6bc Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFS3206TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 210A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS3206TRL

Description：MOSFET N-CH 60V 210A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6540 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS3206TRL

AUIRFS3206TRL

Single FETs, MOSFETs Overview

The AUIRFS3206TRL is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 60V drain-source voltage rating and a maximum continuous drain current of 210A, limited by silicon characteristics. The device utilizes the D2PAK (TO-263) surface-mount package with three pins. Key electrical parameters include a typical on-resistance of 2.4mΩ and a maximum of 3.0mΩ at 10V gate drive. It supports a junction temperature range from -55°C to +175°C and operates with a gate-source voltage threshold between 2V and 4V.

Single FETs, MOSFETs Feature Summary

Advanced process technology enabling ultra-low specific on-resistance for high efficiency.
Enhanced ruggedness regarding gate integrity, avalanche capability, and dynamic dv/dt performance.
Optimized body diode characteristics supporting fast switching and reverse recovery requirements.
Automotive qualification compliant with specified reliability standards.

Single FETs, MOSFETs Applications

High-efficiency synchronous rectification in switch-mode power supplies
Uninterruptible power supply systems
High-speed power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the complete part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the 'TRL' designation matches the required tape-and-reel packaging format. Cross-reference the specific automotive grade requirements with the manufacturer's latest product qualification reports to ensure compliance with current industry standards.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring operation up to 175°C junction temperature. Consider its low on-resistance for minimizing conduction losses in high-current applications. Evaluate the enhanced dv/dt capabilities if the application involves rapid voltage transitions or harsh electromagnetic environments common in automotive electronics.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs designed for robust performance. It represents an evolution in automotive-grade semiconductor solutions, focusing on reducing unit die area resistance while maintaining high thermal stability. The D2PAK package provides a balance between high current handling and compact surface-mount integration suitable for dense PCB layouts.