AUIRFS4310ZTRL

Single FETs, MOSFETs Overview

The AUIRFS4310ZTRL is an N-channel enhancement-mode power MOSFET from Infineon's HEXFET series, housed in a surface-mount D2PAK (TO-263) package. It features a maximum drain-source voltage of 100 V and a continuous drain current of 130 A at 25°C. The device exhibits a typical on-resistance of 7 mΩ and a gate charge of 170 nC at 10 V. Designed for high-power applications, it supports a maximum power dissipation of 300 W and operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Integrated digital isolation technology enabling robust signal transmission across the isolation barrier.
• High-speed switching capability optimized for efficient power conversion with low gate charge.
• Enhanced thermal performance allowing reliable operation under high power dissipation conditions.

Single FETs, MOSFETs Applications

• Isolated synchronous rectification in DC-DC converters
• Motor drive circuits requiring galvanic isolation
• Industrial power supply systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revisions match design requirements. Ensure storage conditions comply with moisture sensitivity levels. Validate marking codes against official Infineon specifications. Check for end-of-life status before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Evaluate thermal resistance parameters against system heat sinking capabilities. Compare gate charge values with driver output strength. Assess breakdown voltage margins relative to circuit transients. Verify package compatibility with PCB footprint designs. Consider operating temperature ranges for environmental constraints.

Single FETs, MOSFETs Part Context

This component belongs to Infineon's isolated power MOSFET portfolio, combining standard switching performance with integrated isolation. It serves as a critical element in modern power electronics where electrical safety and compact design are paramount. The HEXFET technology provides a balance between conduction losses and switching speed.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IRFS4310ZTRLPBF for non-isolated variants. Cross-reference with other Infineon isolated MOSFETs like AUIRF5410 if pinout compatibility is required. Verify isolation voltage ratings match original design specifications when substituting.