AUIRFU8405

Description：MOSFET N-CH 40V 100A IPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:ceca9199ab85 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFU8405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 100A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFU8405

Description：MOSFET N-CH 40V 100A IPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.98mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：155 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5171 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：163W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：IPAK
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for AUIRFU8405

AUIRFU8405

Single FETs, MOSFETs Overview

The AUIRFU8405 is an N-channel enhancement mode MOSFET from the COOLiRFET series, housed in a 3-pin IPAK (TO-251) through-hole package. It features a maximum drain-source voltage of 40 V and a typical on-resistance of 1.65 mΩ at VGS=10V. The device supports a continuous drain current of 100 A (package limited) or 211 A (silicon limited). It operates within a junction temperature range of -55°C to +175°C and includes automotive qualification.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Advanced process technology for ultra-low on-resistance
Fast switching capability with improved repetitive avalanche rating

Single FETs, MOSFETs Applications

Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid systems
Heavy Loads
DC-DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'U' corresponds to the IPAK (TO-251) tube packaging configuration. Confirm that the component meets the required AEC-Q101 automotive grade specifications for your target application environment. Ensure thermal management designs account for the specified junction-to-ambient resistance values under your PCB mounting conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole IPAK package is required for 40 V applications. Consider the 100 A package-limited current versus the 211 A silicon-limited current based on your lead heating constraints. Evaluate the 1.65 mΩ typical on-resistance against system efficiency requirements and verify compatibility with standard gate drive voltages.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET® Power MOSFET family, specifically utilizing advanced processing techniques to achieve low on-resistance per silicon area. It is designed for high-efficiency and reliable operation in automotive environments, offering fast switching speeds and robust thermal performance up to 175°C.